Exam 4: Bipolar Junction Transistors

Figure 1 -Refer to Figure 1. Assume fiDC = 200. The expected value of IB is

Assume a transistor has a maximum power rating of 1 W and VCE = 5 V. If IC = 120 mA, the power rating is not exceeded.

The symbol hFE means the same as

Figure 2 A characteristic curve -For the characteristic curve in Figure 2, the region between A and B is called the

The voltage gain of a BJT amplifier is directly proportional to the internal ac emitter resistance.

Photo transistors have the greatest sensitivity to blue light.

A saturated BJT has maximum collector current.

Typical values of aDC are from

Figure 1 -Refer to Figure 1. Assume fiDC = 200. The value of VCE is approximately

If a BJT is saturated,

For the characteristic curve in Figure 2, the equation IC = fiDCIB is true

The fiDC for a BJT is the ratio of collector current to emitter current.

Figure 3 The transistor has the following ratings: P_D(max)= 650 mW, V_CE(max)= 40 V, and I_C(max)= 200 mA. -Refer to Figure 3. If VCC is set to 48 V, PD(max)is exceeded by

Small signal transistors are available in

hFE varies with

If a BJT is saturated,

The NAND gate is a digital circuit that produces a

The metal mounting tab or case of a power transistor is connected to the

Figure 5 -Refer to Figure 5. When conducting, assume the LED drops 1.8 V and VCE(sat)= 0.2 V. If the input square wave is +3.0 V, the current in the LED will be approximately

The primary purpose of an optocoupler is to