Question 1

ICEO is

Accepted Answer

A) collector current when the transistor is cutoff 
B) collector current when the transistor is saturated 
C) collector current when the transistor is on 
D) base current when the transistor is saturated 
A) collector current when the transistor is cutoff 
B) collector current when the transistor is saturated 
C) collector current when the transistor is on 
D) base current when the transistor is saturated A

Question 2

When a BJT is conducting, the collector current is identical to the emitter current.

Accepted Answer

A) True 
 B)False  False

Question 3

Figure 3 The transistor has the following ratings: PS1U1B1D(max)S1U1B0= 650 mW, VS1U1B1CE(max)S1U1B0= 40 V, and IS1U1B1C(max)S1U1B0= 200 mA.
-Refer to Figure 3. The maximum value that VCC can be adjusted to without exceeding the VCE(max)rating is (ignore other max ratings).

Accepted Answer

A) 60 V 
B) 45 V 
C) 50 V 
D) 40 V 
A) 60 V 
B) 45 V 
C) 50 V 
D) 40 V B

Question 4

Figure 4
-Refer to Figure 4. If RB = 100 k▲, VC is approximately

Accepted Answer

A) 5 V 
B) 7.5 V 
C) 12.5 V 
D) 10 V 
A) 5 V 
B) 7.5 V 
C) 12.5 V 
D) 10 V

Question 5

The value of fiDC is the ratio of

Accepted Answer

A) collector current to base current 
B) collector current to emitter current 
C) emitter current to base current 
D) none of the above 
A) collector current to base current 
B) collector current to emitter current 
C) emitter current to base current 
D) none of the above

Question 6

Figure 7
-Refer to Figure 7. Assume a single problem accounts for the readings. From the readings, you can conclude that

Accepted Answer

A) RB is open 
B) the base- collector junction is open 
C) the base- emitter junction is open 
D) RC is shorted 
A) RB is open 
B) the base- collector junction is open 
C) the base- emitter junction is open 
D) RC is shorted

Question 7

A 10 mV ac signal is applied to the base of a properly biased transistor with RC = 1.2 k▲ and re' = 36 ▲. The output ac voltage is

Accepted Answer

A) 333 mV 
B) 33 mV 
C) 152 mV 
D) 105 mV 
A) 333 mV 
B) 33 mV 
C) 152 mV 
D) 105 mV

Question 8

The NOR gate is a digital circuit that produces a

Accepted Answer

A) HIGH level signal when one or more inputs are LOW 
B) LOW level signal when one or more inputs are LOW 
C) LOW level signal when one or more inputs are HIGH 
D) HIGH level signal when one or more inputs are HIGH 
A) HIGH level signal when one or more inputs are LOW 
B) LOW level signal when one or more inputs are LOW 
C) LOW level signal when one or more inputs are HIGH 
D) HIGH level signal when one or more inputs are HIGH

Question 9

Figure 1
-Refer to Figure 1. If VCC is increased to 18 V, IB will

Accepted Answer

A) decrease 
B) increase 
C) not change 
A) decrease 
B) increase 
C) not change

Question 10

In a certain BJT, the collector current is 22.0 mA when the base current is 100 µA. The emitter current is

Accepted Answer

A) 21.9 mA 
B) 22.1 mA 
C) 22.0 mA 
D) 2.2 mA 
A) 21.9 mA 
B) 22.1 mA 
C) 22.0 mA 
D) 2.2 mA

Question 11

A forward- biased npn transistor has a typical voltage drop from base to emitter of

Accepted Answer

A) 50 V 
B) 10 V 
C) 0.7 V 
D) 1.5 V 
A) 50 V 
B) 10 V 
C) 0.7 V 
D) 1.5 V

Question 12

The base region of a BJT is heavily doped and wide compared to the other two regions.

Accepted Answer

A) True 
 B)False

Question 13

Figure 7
-Refer to Figure 7. The transistor is

Accepted Answer

A) cutoff 
B) in the breakdown region 
C) in the active region 
D) saturated 
A) cutoff 
B) in the breakdown region 
C) in the active region 
D) saturated

Question 14

Figure 6 A phototransistor and its characteristic curve
-Refer to Figure 6. Assume you measure VOUT as 11 V. From this, you can conclude that the light intensity is approximately

Accepted Answer

A) 20 mW/cm2 
B) 10 mW/cm2 
C) 40 mW/cm2 
D) 30 mW/cm2 
A) 20 mW/cm2 
B) 10 mW/cm2 
C) 40 mW/cm2 
D) 30 mW/cm2

Question 15

Figure 4
-Refer to Figure 4. If you wanted to change the transistor to a pnp type, you need to

Accepted Answer

A) increase the base resistor 
B) increase the collector resistor 
C) change both dc sources to negative supplies 
D) all of the above 
A) increase the base resistor 
B) increase the collector resistor 
C) change both dc sources to negative supplies 
D) all of the above

Question 16

In switching circuits, a transistor operates between

Accepted Answer

A) active region and breakdown 
B) cutoff and active region 
C) cutoff and saturation 
D) none of the above 
A) active region and breakdown 
B) cutoff and active region 
C) cutoff and saturation 
D) none of the above

Question 17

Figure 4
-Refer to Figure 4. The largest base resistor that will still saturate the transistor is approximately

Accepted Answer

A) 33 k▲ 
B) 400 k▲ 
C) 330 k▲ 
D) 40 k▲ 
A) 33 k▲ 
B) 400 k▲ 
C) 330 k▲ 
D) 40 k▲

Question 18

Figure 3 The transistor has the following ratings: PS1U1B1D(max)S1U1B0= 650 mW, VS1U1B1CE(max)S1U1B0= 40 V, and IS1U1B1C(max)S1U1B0= 200 mA.
-Refer to Fig 3. Assume VCC is lowered to 15 V. The transistor is

Accepted Answer

A) saturated 
B) in the linear range 
C) cutoff 
A) saturated 
B) in the linear range 
C) cutoff

Question 19

Figure 4
-Refer to Figure 4. Assume RB = 22 k▲. The collector current will be approximately

Accepted Answer

A) 5 mA 
B) 20 mA 
C) 10 mA 
D) 27 mA 
A) 5 mA 
B) 20 mA 
C) 10 mA 
D) 27 mA

Question 20

The light sensitive region of a photo transistor is the

Accepted Answer

A) base 
B) substrate 
C) emitter 
D) collector 
A) base 
B) substrate 
C) emitter 
D) collector

ICEO is

When a BJT is conducting, the collector current is identical to the emitter current.

Figure 3 The transistor has the following ratings: P_D(max)= 650 mW, V_CE(max)= 40 V, and I_C(max)= 200 mA. -Refer to Figure 3. The maximum value that VCC can be adjusted to without exceeding the V_CE(max)rating is (ignore other max ratings).

Figure 4 -Refer to Figure 4. If RB = 100 k▲, VC is approximately

The value of fiDC is the ratio of

Figure 7 -Refer to Figure 7. Assume a single problem accounts for the readings. From the readings, you can conclude that

A 10 mV ac signal is applied to the base of a properly biased transistor with RC = 1.2 k▲ and re' = 36 ▲. The output ac voltage is

The NOR gate is a digital circuit that produces a

Figure 1 -Refer to Figure 1. If VCC is increased to 18 V, IB will

In a certain BJT, the collector current is 22.0 mA when the base current is 100 µA. The emitter current is

A forward- biased npn transistor has a typical voltage drop from base to emitter of

The base region of a BJT is heavily doped and wide compared to the other two regions.

Figure 7 -Refer to Figure 7. The transistor is

Figure 6 A phototransistor and its characteristic curve -Refer to Figure 6. Assume you measure VOUT as 11 V. From this, you can conclude that the light intensity is approximately

Figure 4 -Refer to Figure 4. If you wanted to change the transistor to a pnp type, you need to

In switching circuits, a transistor operates between

Figure 4 -Refer to Figure 4. The largest base resistor that will still saturate the transistor is approximately

Figure 3 The transistor has the following ratings: P_D(max)= 650 mW, V_CE(max)= 40 V, and I_C(max)= 200 mA. -Refer to Fig 3. Assume VCC is lowered to 15 V. The transistor is

Figure 4 -Refer to Figure 4. Assume RB = 22 k▲. The collector current will be approximately

The light sensitive region of a photo transistor is the

Introduction to Semiconductors

Diodes and Applications

Special-Purpose Diodes

Transistor Bias Circuits

BJT Amplifiers

BJT Power Amplifiers

Field-Effect Transistors Fets

Fet Amplifiers and Switching Circuits

Amplifier Frequency Response

Thyristors

The Operational Amplifier

Basic Op-Amp Circuits

Special-Purpose Integrated Circuits

Active Filters

Oscillators

Voltage Regulators

Communication Devices and Methods

Filters

Exam 4: Bipolar Junction Transistors

ICEO is

When a BJT is conducting, the collector current is identical to the emitter current.

Figure 3 The transistor has the following ratings: PD(max)= 650 mW, VCE(max)= 40 V, and IC(max)= 200 mA. -Refer to Figure 3. The maximum value that VCC can be adjusted to without exceeding the VCE(max)rating is (ignore other max ratings).

Figure 4 -Refer to Figure 4. If RB = 100 k▲, VC is approximately

The value of fiDC is the ratio of

Figure 7 -Refer to Figure 7. Assume a single problem accounts for the readings. From the readings, you can conclude that

A 10 mV ac signal is applied to the base of a properly biased transistor with RC = 1.2 k▲ and re' = 36 ▲. The output ac voltage is

The NOR gate is a digital circuit that produces a

Figure 1 -Refer to Figure 1. If VCC is increased to 18 V, IB will

In a certain BJT, the collector current is 22.0 mA when the base current is 100 µA. The emitter current is

A forward- biased npn transistor has a typical voltage drop from base to emitter of

The base region of a BJT is heavily doped and wide compared to the other two regions.

Figure 7 -Refer to Figure 7. The transistor is

Figure 6 A phototransistor and its characteristic curve -Refer to Figure 6. Assume you measure VOUT as 11 V. From this, you can conclude that the light intensity is approximately

Figure 4 -Refer to Figure 4. If you wanted to change the transistor to a pnp type, you need to

In switching circuits, a transistor operates between

Figure 4 -Refer to Figure 4. The largest base resistor that will still saturate the transistor is approximately

Figure 3 The transistor has the following ratings: PD(max)= 650 mW, VCE(max)= 40 V, and IC(max)= 200 mA. -Refer to Fig 3. Assume VCC is lowered to 15 V. The transistor is

Figure 4 -Refer to Figure 4. Assume RB = 22 k▲. The collector current will be approximately

The light sensitive region of a photo transistor is the

Introduction to Semiconductors

Diodes and Applications

Special-Purpose Diodes

Transistor Bias Circuits

BJT Amplifiers

BJT Power Amplifiers

Field-Effect Transistors Fets

Fet Amplifiers and Switching Circuits

Amplifier Frequency Response

Thyristors

The Operational Amplifier

Basic Op-Amp Circuits

Special-Purpose Integrated Circuits

Active Filters

Oscillators

Voltage Regulators

Communication Devices and Methods

Filters

Figure 3 The transistor has the following ratings: P_D(max)= 650 mW, V_CE(max)= 40 V, and I_C(max)= 200 mA. -Refer to Figure 3. The maximum value that VCC can be adjusted to without exceeding the V_CE(max)rating is (ignore other max ratings).

Figure 3 The transistor has the following ratings: P_D(max)= 650 mW, V_CE(max)= 40 V, and I_C(max)= 200 mA. -Refer to Fig 3. Assume VCC is lowered to 15 V. The transistor is