Question 1

The transconductance curve has the same shape as the transfer curve.

Accepted Answer

A) True 
 B)False

Question 2

All MOSFETs are subject to damage from electrostatic discharge.

Accepted Answer

A) True 
 B)False

Question 3

Dual- gate MOSFETs can be either depletion or enhancement devices.

Accepted Answer

A) True 
 B)False

Question 4

Figure 1
-Refer to Figure 1. The source resistor, RS, that would self- bias this JFET at approximately VGS = -2 V is

Accepted Answer

A) 220 ▲ 
B) 470 ▲ 
C) 360 ▲ 
D) 1 M▲ 
A) 220 ▲ 
B) 470 ▲ 
C) 360 ▲ 
D) 1 M▲

Question 5

Figure 3 Assume IS1U1B1DSS S1U1B0= 3.5 mA and VS1U1B1GS(off)S1U1B0= -2 V.
-Refer to Figure 3. If the drain voltage, VD, is 7.6 V, what is VGS?

Accepted Answer

A) -0.62 V 
B) -1.8 V 
C) -1.5 V 
D) -4.2 V 
A) -0.62 V 
B) -1.8 V 
C) -1.5 V 
D) -4.2 V

Question 6

An E- MOSFET cannot use

Accepted Answer

A) drain- feedback bias 
B) voltage- divider bias 
C) self- bias 
A) drain- feedback bias 
B) voltage- divider bias 
C) self- bias

Question 7

For normal operation, the gate- source junction of a JFET is reverse- biased.

Accepted Answer

A) True 
 B)False

Question 8

The IGBT has characteristics of a

Accepted Answer

A) JFET input and BJT output 
B) MOSFET input and a BJT output 
C) BJT input and a JFET output 
D) none of the above 
A) JFET input and BJT output 
B) MOSFET input and a BJT output 
C) BJT input and a JFET output 
D) none of the above

Question 9

JFETs and MOSFETs are often referred to as square- law devices.

Accepted Answer

A) True 
 B)False

Question 10

The most important application for an IGBT is in

Accepted Answer

A) high frequency amplifiers 
B) logic circuits 
C) high voltage and high current switching 
D) power linear amplifiers 
A) high frequency amplifiers 
B) logic circuits 
C) high voltage and high current switching 
D) power linear amplifiers

Question 11

The maximum drain current in a JFET is IDSS, which occurs at VGS = 0 V.

Accepted Answer

A) True 
 B)False

Question 12

A JFET that is operating as a voltage- controlled resistance is

Accepted Answer

A) typically biased near the origin 
B) has minimum resistance at VGS = 0 
C) is operating in the ohmic region 
D) all of the above 
A) typically biased near the origin 
B) has minimum resistance at VGS = 0 
C) is operating in the ohmic region 
D) all of the above

Question 13

A certain MOSFET has IDSS = 6 mA, VGS = -0.67 V, and VGS(off )= -5 V. The drain current, ID is

Accepted Answer

A) 3.0 mA 
B) 0.75 mA 
C) 1.5 mA 
D) 4.5 Ma 
A) 3.0 mA 
B) 0.75 mA 
C) 1.5 mA 
D) 4.5 Ma

The transconductance curve has the same shape as the transfer curve.

All MOSFETs are subject to damage from electrostatic discharge.

Dual- gate MOSFETs can be either depletion or enhancement devices.

Figure 1 -Refer to Figure 1. The source resistor, RS, that would self- bias this JFET at approximately VGS = -2 V is

Figure 3 Assume I_DSS= 3.5 mA and V_GS(off)= -2 V. -Refer to Figure 3. If the drain voltage, VD, is 7.6 V, what is VGS?

An E- MOSFET cannot use

For normal operation, the gate- source junction of a JFET is reverse- biased.

The IGBT has characteristics of a

JFETs and MOSFETs are often referred to as square- law devices.

The most important application for an IGBT is in

The maximum drain current in a JFET is IDSS, which occurs at VGS = 0 V.

A JFET that is operating as a voltage- controlled resistance is

A certain MOSFET has IDSS = 6 mA, VGS = -0.67 V, and VGS(off )= -5 V. The drain current, ID is

Introduction to Semiconductors

Diodes and Applications

Special-Purpose Diodes

Bipolar Junction Transistors

Transistor Bias Circuits

BJT Amplifiers

BJT Power Amplifiers

Fet Amplifiers and Switching Circuits

Amplifier Frequency Response

Thyristors

The Operational Amplifier

Basic Op-Amp Circuits

Special-Purpose Integrated Circuits

Active Filters

Oscillators

Voltage Regulators

Communication Devices and Methods

Filters

Exam 8: Field-Effect Transistors Fets

The transconductance curve has the same shape as the transfer curve.

All MOSFETs are subject to damage from electrostatic discharge.

Dual- gate MOSFETs can be either depletion or enhancement devices.

Figure 1 -Refer to Figure 1. The source resistor, RS, that would self- bias this JFET at approximately VGS = -2 V is

Figure 3 Assume IDSS = 3.5 mA and VGS(off)= -2 V. -Refer to Figure 3. If the drain voltage, VD, is 7.6 V, what is VGS?

An E- MOSFET cannot use

For normal operation, the gate- source junction of a JFET is reverse- biased.

The IGBT has characteristics of a

JFETs and MOSFETs are often referred to as square- law devices.

The most important application for an IGBT is in

The maximum drain current in a JFET is IDSS, which occurs at VGS = 0 V.

A JFET that is operating as a voltage- controlled resistance is

A certain MOSFET has IDSS = 6 mA, VGS = -0.67 V, and VGS(off )= -5 V. The drain current, ID is

Introduction to Semiconductors

Diodes and Applications

Special-Purpose Diodes

Bipolar Junction Transistors

Transistor Bias Circuits

BJT Amplifiers

BJT Power Amplifiers

Fet Amplifiers and Switching Circuits

Amplifier Frequency Response

Thyristors

The Operational Amplifier

Basic Op-Amp Circuits

Special-Purpose Integrated Circuits

Active Filters

Oscillators

Voltage Regulators

Communication Devices and Methods

Filters

Figure 3 Assume I_DSS= 3.5 mA and V_GS(off)= -2 V. -Refer to Figure 3. If the drain voltage, VD, is 7.6 V, what is VGS?