Question 1

If CPE exponent is -1, the element is

Accepted Answer

A)  inductor, 
B)  capacitor, 
C)  resistance 
D)  Warburg impedance 
A)  inductor, 
B)  capacitor, 
C)  resistance 
D)  Warburg impedance

Question 2

The equation that describes Bounded Warburg impedance is

Accepted Answer

A)  $$\frac { \left( \left( \frac { k _ { 1 ak } } { \sqrt { j \omega D _ { A } } } \right) + \left( \frac { k _ { - 1 \dot { ak } } } { \sqrt { j \omega D _ { B } } } \right) \right) } { F \left( \left. b _ { 1 } k _ { 1 \dot { ak } } C _ { A } \right| _ { x =0} - \left. b _ { - 1 } k _ { - 1 \dot { } } C _ { B } \right| _ { x = 0 } \right) }$$ 
B)  $$\frac { \left( k _ { 1 \dot { ak } } \frac { \tanh \left( \left( \sqrt { \frac { j \omega } { D _ { A } } } \right) \delta \right) } { \sqrt { \frac { j \omega } { D _ { A } } } } + k _ { - 1 \dot { ak } } \frac { \tanh \left( \left( \sqrt { \frac { j \omega } { D _ { B } } } \right) \delta \right) } { \sqrt { \frac { j \omega } { D _ { B } } } } \right) } { \left\{ F \left( \left. b _ { 1 } k _ { 1 \dot { ak } } C _ { A } \right| _ { x = 0 } - \left. b _ { - 1 } k _ { - 1 \dot { ak } } C _ { B } \right| _ { x - 0 } \right) \right\} }$$ 
C)  $$\frac { R T } { F ^ { 2 } C _ { A -bulk } \sqrt { j \omega D _ { A } } } + \frac { R T } { F ^ { 2 } C _ { B - bulk} \sqrt { j \omega D _ { B } } }$$ 
D)  none of the above 
A)  $$\frac { \left( \left( \frac { k _ { 1 ak } } { \sqrt { j \omega D _ { A } } } \right) + \left( \frac { k _ { - 1 \dot { ak } } } { \sqrt { j \omega D _ { B } } } \right) \right) } { F \left( \left. b _ { 1 } k _ { 1 \dot { ak } } C _ { A } \right| _ { x =0} - \left. b _ { - 1 } k _ { - 1 \dot { } } C _ { B } \right| _ { x = 0 } \right) }$$ 
B)  $$\frac { \left( k _ { 1 \dot { ak } } \frac { \tanh \left( \left( \sqrt { \frac { j \omega } { D _ { A } } } \right) \delta \right) } { \sqrt { \frac { j \omega } { D _ { A } } } } + k _ { - 1 \dot { ak } } \frac { \tanh \left( \left( \sqrt { \frac { j \omega } { D _ { B } } } \right) \delta \right) } { \sqrt { \frac { j \omega } { D _ { B } } } } \right) } { \left\{ F \left( \left. b _ { 1 } k _ { 1 \dot { ak } } C _ { A } \right| _ { x = 0 } - \left. b _ { - 1 } k _ { - 1 \dot { ak } } C _ { B } \right| _ { x - 0 } \right) \right\} }$$ 
C)  $$\frac { R T } { F ^ { 2 } C _ { A -bulk } \sqrt { j \omega D _ { A } } } + \frac { R T } { F ^ { 2 } C _ { B - bulk} \sqrt { j \omega D _ { B } } }$$ 
D)  none of the above

Question 3

Consider the following reaction $$A \underset { k _ { 2 } } { \stackrel { k _ { 1} } { \rightleftarrows } }B + e ^ { - }$$

. The concentration of A and B in bulk solution are equal. When a positive dc bias is applied (vs. OCP), under steady-state conditions, on the surface,

Accepted Answer

A)  CA > CB 
B)  CA B 
C)  CA = CB 
D)  it could be any of the above depending on kinetic parameter values. 
A)  CA > CB 
B)  CA B 
C)  CA = CB 
D)  it could be any of the above depending on kinetic parameter values.

Question 4

As per PDM, the potential drop across metal-film interface depends on

Accepted Answer

A)  film thickness 
B)  solution pH 
C)  both of the above 
D)  none of the above 
A)  film thickness 
B)  solution pH 
C)  both of the above 
D)  none of the above

Question 5

PDM employs the following equation to describe mass transfer in the film

Accepted Answer

A)  Fick's second law in one dimension 
B)  Fick's second law in two dimensions 
C)  Nernst Planck equation 
D)  Fromhold-Cook equation 
A)  Fick's second law in one dimension 
B)  Fick's second law in two dimensions 
C)  Nernst Planck equation 
D)  Fromhold-Cook equation

Question 6

A simple electron transfer reaction with semi-infinite boundary conditions is analyzed using EIS. The polarization resistance of this system is

Accepted Answer

A)  zero 
B)  infinity 
C)  finite positive value 
D)  finite negative value 
A)  zero 
B)  infinity 
C)  finite positive value 
D)  finite negative value

Question 7

If CPE exponent is 0, then the element is

Accepted Answer

A)  inductor, 
B)  capacitor, 
C)  resistor 
D)  Warburg 
A)  inductor, 
B)  capacitor, 
C)  resistor 
D)  Warburg

Question 8

A simple electron transfer reaction, $$A \underset { k _ { 2 } } { \stackrel { k _ { 1 } } { \rightleftarrows } }B + e ^ { - }$$ is conducted on a RDE.
-In the above equation, if k1dc = 10-2 cm/s and k-1dc = 10-5 cm/s, then the net faradaic current is ______________ mA/cm2 . Remember that 1 M = 1 mol/lit = 10-3 mol/ cm3.

Accepted Answer

19.2 (from

Question 9

Levich equation can be used to estimate

Accepted Answer

A)  diffusion layer thickness in an RDE 
B)  fluid boundary layer thickness in RDE 
C)  temperature boundary layer thickness in RDE 
D)  diffusivity of a reacting species 
A)  diffusion layer thickness in an RDE 
B)  fluid boundary layer thickness in RDE 
C)  temperature boundary layer thickness in RDE 
D)  diffusivity of a reacting species

Question 10

In the usual notation, the expression $$Z = \frac { \rho } { \pi r ^ { 2 } } \frac { \operatorname { coth } ( m \ell ) } { m }$$ 
is used to calculate

Accepted Answer

A)  semi-infinite Warburg impedance 
B)  Bounded Warburg impedance 
C)  CPE impedance 
D)  porous electrode impedance 
A)  semi-infinite Warburg impedance 
B)  Bounded Warburg impedance 
C)  CPE impedance 
D)  porous electrode impedance

Question 11

In the derivation of the Warburg impedance equation, it is assumed that the following effects can be neglected

Accepted Answer

A)  diffusion 
B)  convection 
C)  electromigration 
D)  none of the above 
A)  diffusion 
B)  convection 
C)  electromigration 
D)  none of the above

Question 12

CPE behavior may be expected when the electrode has

Accepted Answer

A)  2D heterogeneity only 
B)  3D heterogeneity only 
C)  both 2D and 3D heterogeneity 
D)  none of the above 
A)  2D heterogeneity only 
B)  3D heterogeneity only 
C)  both 2D and 3D heterogeneity 
D)  none of the above

Question 13

A perfectly insulating film on an electrode surface is best modeled as a ________ (one word)

Accepted Answer

The answer of A perfectly insulating film on an electrode...

Question 14

For a simple electron transfer reaction, with finite diffusion layer thickness (bounded Warburg impedance) the charge transfer resistance

Accepted Answer

A)  increases with dc bias is increased from OCP 
B)  increases when dc bias is decreased from OCP 
C)  decreases when dc bias is increased from OCP 
D)  decreases when dc bias is decreased from OCP 
A)  increases with dc bias is increased from OCP 
B)  increases when dc bias is decreased from OCP 
C)  decreases when dc bias is increased from OCP 
D)  decreases when dc bias is decreased from OCP

If CPE exponent is -1, the element is

The equation that describes Bounded Warburg impedance is

Consider the following reaction $A \underset { k _ { 2 } } { \stackrel { k _ { 1} } { \rightleftarrows } }B + e ^ { - }$ . The concentration of A and B in bulk solution are equal. When a positive dc bias is applied (vs. OCP), under steady-state conditions, on the surface,

As per PDM, the potential drop across metal-film interface depends on

PDM employs the following equation to describe mass transfer in the film

A simple electron transfer reaction with semi-infinite boundary conditions is analyzed using EIS. The polarization resistance of this system is

If CPE exponent is 0, then the element is

Levich equation can be used to estimate

In the usual notation, the expression $Z = \frac { \rho } { \pi r ^ { 2 } } \frac { \operatorname { coth } ( m \ell ) } { m }$ is used to calculate

In the derivation of the Warburg impedance equation, it is assumed that the following effects can be neglected

CPE behavior may be expected when the electrode has

A perfectly insulating film on an electrode surface is best modeled as a ________ (one word)

For a simple electron transfer reaction, with finite diffusion layer thickness (bounded Warburg impedance) the charge transfer resistance

Introduction

Experimental Aspects

Data Validation

Data Analysis Equivalent Electrical Circuits

Mechanistic Analysis

Nonlinear Eis

Filters

Exam 6: Eis Other Physical Phenomena

If CPE exponent is -1, the element is

The equation that describes Bounded Warburg impedance is

As per PDM, the potential drop across metal-film interface depends on

PDM employs the following equation to describe mass transfer in the film

A simple electron transfer reaction with semi-infinite boundary conditions is analyzed using EIS. The polarization resistance of this system is

If CPE exponent is 0, then the element is

Levich equation can be used to estimate

In the usual notation, the expression Z=ρπr2coth⁡(mℓ)mZ = \frac { \rho } { \pi r ^ { 2 } } \frac { \operatorname { coth } ( m \ell ) } { m }Z=πr2ρ​mcoth(mℓ)​ is used to calculate

In the derivation of the Warburg impedance equation, it is assumed that the following effects can be neglected

CPE behavior may be expected when the electrode has

A perfectly insulating film on an electrode surface is best modeled as a ________ (one word)

For a simple electron transfer reaction, with finite diffusion layer thickness (bounded Warburg impedance) the charge transfer resistance

Introduction

Experimental Aspects

Data Validation

Data Analysis Equivalent Electrical Circuits

Mechanistic Analysis

Nonlinear Eis

Filters

In the usual notation, the expression $Z = \frac { \rho } { \pi r ^ { 2 } } \frac { \operatorname { coth } ( m \ell ) } { m }$ is used to calculate