Question 1

A Temkin isotherm model will reduce to Langmuir isotherm when parameter "g" is _____

Accepted Answer

0 (exact)

Question 2

In a film, two types of defects that are considered in point defect model are ________ (one word) and interstitial

Accepted Answer

vacancies

Question 3

According to empirical studies, when the CPE parameter Y0 increases, the value of n

Accepted Answer

A)  increases 
B)  decreases 
C)  does not change 
D)  can either increase or decrease but will not remain the same. 
A)  increases 
B)  decreases 
C)  does not change 
D)  can either increase or decrease but will not remain the same. B

Question 4

A simple electron transfer reaction, $$A \underset { k _ { 2 } } { \stackrel { k _ { 1 } } { \rightleftarrows } }B + e ^ { - }$$ is conducted on a RDE.
-Given that DA = DB, and CA-bulk = CB-bulk = 50 mM, if the concentration of A on the surface, CA-s = 20 mM at a given dc potential, then CB-s = _______ mM

Accepted Answer

Question 5

For a simple electron transfer reaction, with finite diffusion layer thickness (bounded Warburg impedance) the polarization resistance

Accepted Answer

A)  increases with dc bias is increased from OCP 
B)  increases when dc bias is decreased from OCP 
C)  decreases when dc bias is increased from OCP 
D)  decreases when dc bias is decreased from OCP 
A)  increases with dc bias is increased from OCP 
B)  increases when dc bias is decreased from OCP 
C)  decreases when dc bias is increased from OCP 
D)  decreases when dc bias is decreased from OCP

Question 6

PDM employs the following assumption to describe mass transfer within the film.

Accepted Answer

A)  the film is a continuous medium 
B)  film is a lattice 
C)  film is porous 
D)  film has an accumulation of ions near interfaces. 
A)  the film is a continuous medium 
B)  film is a lattice 
C)  film is porous 
D)  film has an accumulation of ions near interfaces.

Question 7

CPE can arise from the following distribution of time constants

Accepted Answer

A)  normal 
B)  logarithmic 
C)  random 
D)  normal distribution of logarithmic 
A)  normal 
B)  logarithmic 
C)  random 
D)  normal distribution of logarithmic

Question 8

As per PDM, cation interstitials are consumed at

Accepted Answer

A)  metal-film interface 
B)  film-solution interface 
C)  both of the above 
D)  none of the above 
A)  metal-film interface 
B)  film-solution interface 
C)  both of the above 
D)  none of the above

Question 9

During anion vacancy creation, the film thickness remains constant

Accepted Answer

A) True 
 B)False

Question 10

When a film is present on an electrode surface, sometimes, an inductive loop at mid frequencies is seen in the complex plane plot of EIS data. This can be described using

Accepted Answer

A)  PDM 
B)  SCA 
C)  AIC 
D)  all of the above 
A)  PDM 
B)  SCA 
C)  AIC 
D)  all of the above

Question 11

For a simple electron transfer reaction, the coupling of mass transfer and kinetics at the electrode surface is described by

Accepted Answer

A)  relating the species flux and the current 
B)  equating the species concentration with the bulk concentration 
C)  Fick's second law 
D)  none of the above 
A)  relating the species flux and the current 
B)  equating the species concentration with the bulk concentration 
C)  Fick's second law 
D)  none of the above

Question 12

Under semi-infinite boundary conditions, for a simple electron transfer reaction, the concentration oscillations and current oscillations have a phase offset (in radians) of

Accepted Answer

A)  $$\pm \pi$$ 
B)  0 
C)  $$\frac { \pm \pi } { 2 }$$ 
D)  $$\frac { \pm \pi } { 4 }$$ 
A)  $$\pm \pi$$ 
B)  0 
C)  $$\frac { \pm \pi } { 2 }$$ 
D)  $$\frac { \pm \pi } { 4 }$$

Question 13

The complex plane plot of a simple electron transfer reaction acquired at multiple dc bias values is given below.
  The low-frequency data shows the signature of

Accepted Answer

A)  kinetic limited regime 
B)  semi-infinite Warburg 
C)  Bounded Warburg 
D)  constant phase element 
A)  kinetic limited regime 
B)  semi-infinite Warburg 
C)  Bounded Warburg 
D)  constant phase element

Question 14

PDM describes various processes that can occur in a film on the electrode surface. As per PDM, anion vacancies are produced at

Accepted Answer

A)  metal-film interface 
B)  film-solution interface 
C)  both of the above 
D)  none of the above 
A)  metal-film interface 
B)  film-solution interface 
C)  both of the above 
D)  none of the above

Question 15

Consider a system which exhibits CPE behavior. Given Rsol = 100 $\Omega$ cmS1U1P12S1S1P0, Rt = Rp = 200 $\Omega$ cm2, and CPE parameters Y0 = 5×10-5 (rad s-1)1-n, n =0.8 , the equivalent capacitance as per Brug's formula is __________ $\mu$F cm2 and as per Hsu & Mansfeld formula is _________ $\mu$F cm2

Accepted Answer

12 (from 1

Question 16

Consider a porous electrode. Edc = 0 V vs. OCP, and there is no reaction. When an ac potential is applied, at the pore end (x = l),

Accepted Answer

A)  potential gradient is zero 
B)  potential amplitude is zero 
C)  potential amplitude is Eac0 
D)  none of the above 
A)  potential gradient is zero 
B)  potential amplitude is zero 
C)  potential amplitude is Eac0 
D)  none of the above

Question 17

In case of a rotating disc electrode (RDE), as per Levich equation, the diffusion layer thickness depends on kinematic viscosity ($\nu$) as

Accepted Answer

A)  $$v ^ { 1 / 2 }$$ 
B)  $$v ^ { 1 / 3 }$$ 
C)  $$v ^ { 1 / 6 }$$ 
D)  $$v ^ { 2 }$$ 
A)  $$v ^ { 1 / 2 }$$ 
B)  $$v ^ { 1 / 3 }$$ 
C)  $$v ^ { 1 / 6 }$$ 
D)  $$v ^ { 2 }$$

Question 18

If a porous insulating film is present on an electrode surface, the film component may be modeled with a

Accepted Answer

A)  capacitor in parallel with a resistor 
B)  simple resistor 
C)  capacitor in parallel with a series combination of resistor and Warburg impedance 
D)  a simple capacitor 
A)  capacitor in parallel with a resistor 
B)  simple resistor 
C)  capacitor in parallel with a series combination of resistor and Warburg impedance 
D)  a simple capacitor

Question 19

Consider the following reaction $$A \underset { k _ { 2 } } { \stackrel { k _ { 1 } } { \rightleftarrows } } B + e ^ { - }$$ 
. The concentration of A and B in bulk solution are equal. When a negative dc bias is applied (vs. OCP), under steady-state conditions, on the surface,

Accepted Answer

A)  CA > CB, 
B)  CA B 
C)  CA = CB 
D)  it could be any of the above depending on kinetic parameter values. 
A)  CA > CB, 
B)  CA B 
C)  CA = CB 
D)  it could be any of the above depending on kinetic parameter values.

Question 20

Under semi-infinite boundary conditions, for a simple electron transfer reaction, the concentration oscillations and potential oscillations have a phase offset (in radians) of

Accepted Answer

A)  $$\frac { \pi } { 2 }$$ 
B)  $$\frac { - \pi } { 2 }$$ 
C)  0 
D)  $$\frac { \pm \pi } { 4 }$$ 
A)  $$\frac { \pi } { 2 }$$ 
B)  $$\frac { - \pi } { 2 }$$ 
C)  0 
D)  $$\frac { \pm \pi } { 4 }$$

A Temkin isotherm model will reduce to Langmuir isotherm when parameter "g" is _____

In a film, two types of defects that are considered in point defect model are ________ (one word) and interstitial

According to empirical studies, when the CPE parameter Y₀ increases, the value of n

For a simple electron transfer reaction, with finite diffusion layer thickness (bounded Warburg impedance) the polarization resistance

PDM employs the following assumption to describe mass transfer within the film.

CPE can arise from the following distribution of time constants

As per PDM, cation interstitials are consumed at

During anion vacancy creation, the film thickness remains constant

When a film is present on an electrode surface, sometimes, an inductive loop at mid frequencies is seen in the complex plane plot of EIS data. This can be described using

For a simple electron transfer reaction, the coupling of mass transfer and kinetics at the electrode surface is described by

Under semi-infinite boundary conditions, for a simple electron transfer reaction, the concentration oscillations and current oscillations have a phase offset (in radians) of

The complex plane plot of a simple electron transfer reaction acquired at multiple dc bias values is given below. The low-frequency data shows the signature of

PDM describes various processes that can occur in a film on the electrode surface. As per PDM, anion vacancies are produced at

Consider a system which exhibits CPE behavior. Given R_sol = 100 $\Omega$ cm², R_t = R_p = 200 $\Omega$ cm², and CPE parameters Y₀ = 5×10^-5 (rad s^-1)^1-ⁿ, n =0.8 , the equivalent capacitance as per Brug's formula is __ $\mu$ F cm² and as per Hsu & Mansfeld formula is _ $\mu$ F cm²

Consider a porous electrode. E_dc = 0 V vs. OCP, and there is no reaction. When an ac potential is applied, at the pore end (x = l),

In case of a rotating disc electrode (RDE), as per Levich equation, the diffusion layer thickness depends on kinematic viscosity ( $\nu$ ) as

If a porous insulating film is present on an electrode surface, the film component may be modeled with a

Consider the following reaction $A \underset { k _ { 2 } } { \stackrel { k _ { 1 } } { \rightleftarrows } } B + e ^ { - }$ . The concentration of A and B in bulk solution are equal. When a negative dc bias is applied (vs. OCP), under steady-state conditions, on the surface,

Under semi-infinite boundary conditions, for a simple electron transfer reaction, the concentration oscillations and potential oscillations have a phase offset (in radians) of

Introduction

Experimental Aspects

Data Validation

Data Analysis Equivalent Electrical Circuits

Mechanistic Analysis

Nonlinear Eis

Filters

Exam 6: Eis Other Physical Phenomena

A Temkin isotherm model will reduce to Langmuir isotherm when parameter "g" is _____

In a film, two types of defects that are considered in point defect model are ________ (one word) and interstitial

According to empirical studies, when the CPE parameter Y0 increases, the value of n

For a simple electron transfer reaction, with finite diffusion layer thickness (bounded Warburg impedance) the polarization resistance

PDM employs the following assumption to describe mass transfer within the film.

CPE can arise from the following distribution of time constants

As per PDM, cation interstitials are consumed at

During anion vacancy creation, the film thickness remains constant

When a film is present on an electrode surface, sometimes, an inductive loop at mid frequencies is seen in the complex plane plot of EIS data. This can be described using

For a simple electron transfer reaction, the coupling of mass transfer and kinetics at the electrode surface is described by

Under semi-infinite boundary conditions, for a simple electron transfer reaction, the concentration oscillations and current oscillations have a phase offset (in radians) of

The complex plane plot of a simple electron transfer reaction acquired at multiple dc bias values is given below. The low-frequency data shows the signature of

PDM describes various processes that can occur in a film on the electrode surface. As per PDM, anion vacancies are produced at

Consider a porous electrode. Edc = 0 V vs. OCP, and there is no reaction. When an ac potential is applied, at the pore end (x = l),

In case of a rotating disc electrode (RDE), as per Levich equation, the diffusion layer thickness depends on kinematic viscosity ( ν\nuν ) as

If a porous insulating film is present on an electrode surface, the film component may be modeled with a

Under semi-infinite boundary conditions, for a simple electron transfer reaction, the concentration oscillations and potential oscillations have a phase offset (in radians) of

Introduction

Experimental Aspects

Data Validation

Data Analysis Equivalent Electrical Circuits

Mechanistic Analysis

Nonlinear Eis

Filters

According to empirical studies, when the CPE parameter Y₀ increases, the value of n

Consider a porous electrode. E_dc = 0 V vs. OCP, and there is no reaction. When an ac potential is applied, at the pore end (x = l),

In case of a rotating disc electrode (RDE), as per Levich equation, the diffusion layer thickness depends on kinematic viscosity ( $\nu$ ) as