Exam 41: Conduction of Electricity in Solids

If ρ_m is the mass density of a conducting material, V its volume, M its molar mass, and N_A Avogadro's number, the number density n of conduction electrons in the material is given by:

At T = 0 K the probability that a state 0.50 eV below the Fermi level is occupied is:

Magnesium has 8.6 x 10²⁸ conduction electrons per cubic meter. What is the Fermi energy for magnesium?

Compared to an insulator, the energy gap of a semiconductor is:

"LED" stands for:

The occupancy probability for a state with energy equal to the Fermi energy is:

The contact electric field in the depletion region of a p-n junction is produced by:

For a metal at absolute temperature T, with Fermi energy E_F, the occupancy probability is given by:

A certain material has a resistivity of 7.8 *10^-8 $\Omega$ .m at room temperature, and its resistivity increases as the temperature is raised by 100 $\degree$ C. The material is most likely:

In a metal at 0 K, the Fermi energy is:

A donor replacement atom in silicon might have ______ electrons in its outer shell.

The number density n of conduction electrons, the resistivity $\rho$ , and the temperature coefficient of resistivity α are given below for five materials. Which is a semiconductor?

We classify solids electrically according to three basic properties. What are they?

The Fermi-Dirac probability function P(E) varies between:

For a metal at room temperature the temperature coefficient of resistivity is determined primarily by:

For a pure semiconductor the Fermi level is:

A pure semiconductor at room temperature has:

A sinusoidal potential difference V_in = V_msin( $\omega$ t) is applied to the p-n junction as shown. Which graph correctly shows V_out as a function of time?

A hole refers to:

At T = 0 K the probability that a state 0.50 eV above the Fermi level is occupied is: