An NMOS Transistor Fabricated in A $0.18-\mu \mathrm{m}$ CMOS Technology Has $L=0.54 \mu \mathrm{m}$

An NMOS transistor fabricated in a $0.18-\mu \mathrm{m}$ CMOS technology has $L=0.54 \mu \mathrm{m}$ and $W=$ $10.8 \mu \mathrm{m}$ . The technology is specified to have $\mu_{n} C_{o x}=400 \mu \mathrm{A} / \mathrm{V}^{2}, V_{t n}=0.5 \mathrm{~V}$ , and $V_{A}^{\prime}=$ $5 \mathrm{~V} / \mu \mathrm{m}$ .
(a) If the device is operated in saturation with an overdrive voltage of $0.2 \mathrm{~V}$ , find the required values of $I_{D}$ and $V_{G S}$ , along with the resulting values of $g_{m}$ and $r_{o}$ . (b) If the gate width is doubled but the value of $V_{O V}$ is maintained, what do the values of $I_{D}, g_{m}$ , and $r_{o}$ become?

Correct Answer:

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(a) Saturation with ,
\[\begin{aligned}
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